| PART |
Description |
Maker |
| STB15NM60N STI15NM60N STP15NM60N STF/I15NM60N STF1 |
N-channel 600V - 0.270ヘ - 14A - D2/I2PAK - TO-220/FP - TO-247 Second generation MDmesh⑩ Power MOSFET
N-channel 600V - 0.270Ω - 14A - D2/I2PAK - TO-220/FP - TO-247 Second generation MDmesh Power MOSFET
N-channel 600V - 0.270Ω - 14A - D2/I2PAK - TO-220/FP - TO-247 Second generation MDmesh?/a> Power MOSFET
N-channel 600V - 0.270楼? - 14A - D2/I2PAK - TO-220/FP - TO-247 Second generation MDmesh垄芒 Power MOSFET
|
STMicroelectronics
|
| IRF7406PBF IRF7406TRPBF |
Generation V Technology
HEXFET㈢Power MOSFET
HEXFET?Power MOSFET
|
International Rectifier
|
| DMN3024LSD |
New Generation MOSFET
|
Diodes
|
| DMP3025LK3 |
New Generation MOSFET
|
Diodes
|
| BFC47 |
4TH GENERATION MOSFET
|
Seme LAB
|
| BFC17 |
4TH GENERATION MOSFET
|
Seme LAB
|
| SUN10A60F |
New Generation N-Ch Power MOSFET
|
KODENSHI KOREA CORP.
|
| BFC43 |
4TH GENERATION MOSFET
|
TT electronics Semelab Limited
Seme LAB
|
| IRLML6302TRPBF IRLML6302PBF07 |
HEXFET? Power MOSFET
technology, Ultra Low On-Resistance, P-Channel MOSFET
generation v technology
|
International Rectifier
|
